Samsung Galaxy S6 to pack ultrafast memory

February 26, 2015
(Courtesy of Samsung)

(Courtesy of Samsung)

By Kim Yoo-chul

Samsung Electronics has started mass producing 128-gigabyte universal flash storage (UFS) chips for smartphones for the first time.

It will use the latest chip in its new flagship model Galaxy S6, helping users to do data-intensive multi-tasking without buffering.

The NAND flash-based storage, regarded as the next-generation memory chip, is 2.7-times faster than the existing high-end embedded MultiMedia Card (eMMC) 5.0 memory storage and cuts power consumption by half.

Samsung said the latest development wrote data 28 times faster than external memory cards, making it ideal for multi-tasking.

128-gigabyte universal flash storage (UFS) chips (Korea Times file)

128-gigabyte universal flash storage (UFS) chips (Korea Times file)

Samsung’s UFS lineup comes in 32, 64 and 128 gigabytes.

“UFS is designed mainly for high-capacity flash drives in mobile devices, and is becoming relevant as the storage requirements of mobile users grows,” said Samsung executive Baek Ji-ho.

Samsung has teamed with Xiaomi, one of its main clients, to set up the new memory storage standard by pushing the UFS market. Apple will also spend billions of dollars on Samsung chips and displays.

The Joint Electron Device Engineering Council (JEDEC) designed the UFS standard. Nokia, Toshiba, SK hynix and Micron Technology of the U.S. also support it.

Samsung’s memory chip business has been generating about 1 trillion won (US$1 billion) in operating profit monthly since last July on strong memory chip demand.